Abstract
GaInAsP/InP terraced substrate (TS) lasers (λ=1.3 µm) have been fabricated and stabilized single transverse mode operation has been demonstrated. The wafers were prepared by a single-step LPE growth on (100) n-InP terraced substrates which was terraced along <011> orientation. Pulsed threshold current was less than 50 mA at room temperature. Single transverse and longitudinal mode operation was obtained up to 2.8 times the threshold. Cw operation was also achieved at room temperatures.
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