Single transverse mode control of VCSEL by photonic crystal and trench patterning

Abstract

Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constants and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.