Abstract

Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in./sup 2/ are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300-725 K. Such a diamond heater/sensor device is reported for the first time.

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