Abstract
Abstract Heat generation and temperature sensing, essential for most heater applications, were achieved by using a single diamond resistor. Chemical vapor-deposited p-type diamond resistors were fabricated on polycrystalline diamond substrates and oxidized Si wafers using diamond film technology compatible with integrated circuit processing. The resistivity-temperature relationship of diamond thermistors was characterized in the temperature range of 300–1000 K. The maximum heating temperature and power density of 950 K and 93 W cm −2 , respectively, were achieved for heating application. The average difference between the temperatures determined by self-sensing of diamond thin film heaters and the temperatures measured by thermocouples was in the range of 1.05–3.6%. Due to its high thermal conductivity, the substrate temperature was isothermal, as indicated by two-dimensional optical thermometry.
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