Abstract

Silica sheathed SnO 2 microcables were grown directly on a Si substrate via a simple one-step vapor phase method, with high yield and uniform distribution, using gold as a catalyst. The morphology, the microstructure and the chemical composition of the microcables were characterized by means of scanning electron microscopy coupled with an X-ray microanalysis equipment, transmission electron microscopy, selected area diffraction pattern, X-ray diffraction and UV–vis and Raman spectroscopies. A possible growth mechanism of the microcables was also proposed on the basis of study of the products obtained at different thermal treatment times in the furnace.

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