Abstract
Single-step -based reactive ion etching (RIE) process, without alternating plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to high were etched without any mid- or post-etch plasma treatment. Smooth and polymer-free sidewalls led to a slight undercut resulting in sidewall slope of . Very low waveguide propagation losses of “shallow” etched waveguides were obtained. The etched surface has a root-mean-square roughness of .
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