Single-step bandgap control in InGaAs/lnGaAlAs quantum well modulators via MeV implants

Abstract

A large blue shift of the bandgap, 138 meV, in InGaAs/InGaAlAs quantum well pin modulators using a single-step MeV phosphorus ion implantation is reported. Current-voltage and photocurrent measurements show that the junction characteristic is well maintained. Moreover, we find that the blue-shifted quantum wells remain electro-optically active after implantation. Thus this technique, in addition to providing a means of producing side-by-side active and passive sections, is also promising for dual-wavelength active sections in a single quantum well wafer.