Single spatial mode room temperature operated 3.15 [micro sign]m diode lasers

Abstract

Ridge waveguide type-I quantum-well GaSb-based diode lasers operating at room temperatures in the spectral region near 3.15 µm have been designed and fabricated. The laser active region comprises three InGaAsSb quantum-wells embedded into quinary AlInGaAsSb barrier material to promote carrier confinement. Lasers generate 9 mW of continuous-wave output power at 3.16 µm in a diffraction limited beam at 20°C. Devices operate in continuous-wave regime up to 40°C producing above 1 mW of power at wavelength above 3.2 µm.