Abstract
Ga0.53In0.47As1−xBix/Al0.48In0.52As single quantum wells were grown by molecular-beam epitaxy on InP substrates with bismuth content as high as 7% in the well layer. The electroluminescence spectra with a peak wavelength as long as 2.5 μm was observed after applying electric bias on p-n diodes fabricated from these epitaxial structures. It has been shown that both the peak wavelength and the emitted light intensity change only slightly when the temperature of the experiment is varied from 10 °C to 60 °C. It was concluded that quaternary bismides grown on InP could be a prospective new technological system for the fabrication of mid-infrared radiation sources.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
