Abstract
A single-pole-four-throw (SP4T) switch using a high-aspect ratio lateral metal-contact micromachined switch is reported. This simplified SP4T micromachined switch is developed using deep reactive ion etching fabrication technology based on silicon-on-insulator wafer. The measurement results of the SP4T switch show an insertion loss of less than 1 dB and isolation of 30 dB from DC to 6 GHz.
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