Abstract
We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and isolated emission peaks from these quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4 K. The estimated g(2)[0] value is 0.25, which becomes 0.05 when corrected for background and detector dark counts. We have also observed the single-photon nature of the emission up to 100 K (g(2)[0] = 0.47). These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures.
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