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Abstract
Single photon detection is one of the most challenging goals of photonics. In recent years, the study of ultra-fast and/or low-intensity phenomena has received renewed attention from the academic and industrial communities. Intense research activity has been focused on bio-imaging applications, bio-luminescence, bio-scattering methods, and, more in general, on several applications requiring high speed operation and high timing resolution. In this paper we present design and characterization of bi-dimensional arrays of a next generation of single photon avalanche diodes (SPADs). Single photon sensitivity, dark noise, afterpulsing and timing resolution of the single SPAD have been examined in several experimental conditions. Moreover, the effects arising from their integration and the readout mode have also been deeply investigated.
Highlights
In the last three decades several research teams investigated the possibility to build a silicon photosensor suitable for single photon counting applications ([1] and references therein)
Since a higher electric field enhances the probability to trigger the avalanche, photon detection efficiency increases with the excess bias voltage (EBV), PDE measured at room temperature, for 20% of EBV was about: 50% at 550 nm, 10% at 850 nm and 3% at 1000 nm [14]
In order to assure the single photon avalanche diodes (SPADs) effective operating conditions, the single photon regime was checked by the evaluation that in no case, within our statistics, no events corresponding to the coincidence of the two SPADs with the PMT were present
Summary
In the last three decades several research teams investigated the possibility to build a silicon photosensor suitable for single photon counting applications ([1] and references therein). To be used as SPAD, a diode must have a structure that fulfills some basic requirements: (i) the breakdown must be uniform over the whole active area in order to produce a standard macroscopic current pulse; (ii) the dark counting rate must be sufficiently low; (iii) the probability to generate afterpulses should be low. Precise resistive elements are embedded for each individual micro-cell of the array and provide effective feedback for stabilization and quenching of the avalanche process [8] Such technology allows the production of large numbers of micro-cells on a common substrate (with or without a read-out circuitry) in order to achieve new imaging devices [27] or high-resolution and high-sensitivity Silicon Photomultipliers (SiPM) [9,26,28]. In this paper we present the results of a characterization work on prototypes of the generation devices
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