Abstract
Epitaxial InFeSb/GaAs heterostructures were obtained by laser deposition in vacuum. Investigations by high-resolution transmission electron microscopy and microdiffraction showed that the InFeSb layers are single-crystal and do not contain additional phase inclusions. Study of their magnetotransport properties have revealed that an anomalous Hall effect and a negative magnetoresistance up to room temperature are observed in the structures.
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