Abstract
The magnetic field dependences of the Hall and Nernst-Ettingshausen effects in (In, Fe)Sb, (Ga, Fe)Sb, (Ga, Mn)As diluted magnetic semiconductors were investigated. The samples were fabricated on a semi-insulating GaAs substrates by pulsed laser deposition in vacuum. The manifestation of the anomalous Nernst-Ettingshausen effect along with the anomalous Hall effect in manganese-containing structures was shown experimentally. It is demonstrated that the difference in the magnetic field dependences of the Hall and Nernst-Ettingshausen effects in systems with Mn and Fe is due to the different nature of ferromagnetism.
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