Abstract
We investigated the influence of ZrN/Zr bilayered film thickness on the (111) Cu orientation and the thermal stability of the Cu/ZrN/Zr/Si contact system by X-ray diffraction and Auger electron spectroscopy analyses. We confirmed that the single-oriented growth of (111) Cu can be realized by interposing the ZrN (400 Å)/Zr (200 Å) bilayered film between Cu and Si. It was revealed that the (111) Cu/(111) ZrN/(002) Zr/(001) Si contact system is satisfactorily stable up to 600°C without undesirable interfacial reaction and interdiffusion, maintaining the low contact resistivity of the ZrSi2 adhesion layer at the Si interface and the single-oriented state of the (111) Cu overlayer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
