Abstract
Data are presented on a single mode InGaAs DBR MQW vertical-cavity surface-emitting laser that uses a low temperature growth of a highly resistive AlGaAs dielectric aperture. An epitaxial regrowth is used to contact the laser active region, with the AlGaAs aperture resulting in cavity-induced antiguiding. Antiguiding is observed in 6-μm diameter devices, with single-mode operation obtained over the range of continuous-wave operation (about 8× threshold). Pulsed operation shows lowest order transverse mode profiles up to 24× threshold.
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