Abstract
A single-event transient (SET) due to alpha particle strike is studied in 11- and 6-nm-bulk FinFETs and 6-nm-bulk nanosheet FET using 3-D TCAD simulation. The nanosheet device shows superior immunity to alpha particles due to the strong gate controllability. The floating nanosheets isolated from the bulk substrate and the surrounding gate structure suppress charging due to ionization radiation. The angular irradiation effect is also studied. The impact of the incident angle is less sensitive on the nanosheet FET compared with the FinFET. This is attributed to the fact that the channel is segmented into three stacks with each controlled by the surrounding gate, thereby physically decoupling the transient charges and reducing the SET in the nanosheet FET.
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