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Abstract
基于130nm体硅CMOS工艺，设计了具有不同阱/衬底接触与MOS管有源区间距、NMOS有源区与PMOS有源区间距的反相器链，利用脉冲激光试验开展了不同设计和不同工作电压下CMOS电路的单粒子闩锁效应敏感性研究.结果表明，随着阱/衬底接触与MOS管有源区的间距减小，以及NMOS与PMOS有源区间距的增大，电路抗SEL效应能力增强.此外，不同工作电压下电路的SEL效应规律表明，电压越大，反相器电路的SEL电流越大，且随着阱/衬底接触与MOS管有源区间距的减小以及NMOS与PMOS有源区间距的增大，电路出现SEL效应的开启电压增大.结合CMOS中寄生结构和单粒子闩锁效应触发机制，分析了相关因素影响电路单粒子闩锁效应敏感性的内在机制.
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