Abstract
Experimental dc I-V curves of single ultra-small (∼ 50 × 50nm 2) Al/AlO x/Al tunnel junctions were used to model characteristics of single-electron transistors using similar junctions, within the framework of the “orthodox” theory of correlated tunneling. We have found that results from the simulations are very similar to experimental I-V curves of the transistors measured over a wide range of temperature.
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