Abstract
A single-electron parametron memory cell, based on two conducting islands separated by a multiple tunnel junction, has been realized in highly doped silicon-on-insulator. A memory cell with integrated read-out electrometers was fabricated using a combination of high-resolution electron beam lithography and reactive ion etching. The layout and operation of the memory cell is based on a proposal by Korotkov and Likharev, but modified in order to simplify fabrication. The operation of the electrometer, and the cell polarization characteristics are investigated by low temperature electrical measurements. Memory operation is indicated by current hysteresis in the electrometer characteristics with appropriate gate bias voltages.
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