Abstract
The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.
Highlights
The semiconductor single-electron transistors (SETs), which comprise either the double-barrier tunnel junction (DTJ) with a single quantum dot (QD) or the multiple tunnel junction (MTJ) with multiple quantum dots (MQDs), allow single-electron transport through the discrete quantum energy states of the semiconductor QDs [1,2,3,4,5]
The precise control of the single-electron transport characteristics was demonstrated on various types of semiconductor QD-based DTJ and MTJ device schemes
These may in turn increase the leakage current at the Coulomb blockade state; the SET will lead to the impairable operation of the SET-based sensors
Summary
The semiconductor single-electron transistors (SETs), which comprise either the double-barrier tunnel junction (DTJ) with a single quantum dot (QD) or the multiple tunnel junction (MTJ) with multiple quantum dots (MQDs), allow single-electron transport through the discrete quantum energy states of the semiconductor QDs [1,2,3,4,5]. Cotunneling events can be categorized into two different types, i.e., one is elastic cotunneling that occurs via additional electron tunneling through the intermediate virtual quantum levels in the QD, and the other is inelastic cotunneling that takes place via the in- and out-tunneling of other electrons through other quantum levels [33] These may in turn increase the leakage current at the Coulomb blockade state (i.e., valley current of CBO); the SET will lead to the impairable operation of the SET-based sensors. The transport characteristics of the fabricated SETs are thoroughly examined, and their effective electron temperatures are analyzed and discussed by means of the cotunneling current characterization
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