Single electron memory characteristic of silicon nanodot nanowire transistor

Abstract

The authors have successfully fabricated an Si nanodot nanowire memory transistor using an inorganic SiO2 EB resist process for the formation of a 15 nm wide Si nanowire and an RTO process of an ultra-thin a-Si:H film for the ultra-small Si nanodot formation. In the fabricated Si nanodevice, a very large single electron charging effect, i.e. ΔVth of 0.72 V, is experimentally observed, and ΔVth of 2.2 V at 3 electrons is confirmed at room temperature. The developed technology may be useful for opening the way towards future Si nanodevices.