Abstract
We have fabricated silicon quantum dot devices based on a dual gate technique. Two lateral gates deplete the inversion layer which is induced by a top gate, thus forming a quantum dot located between the source and drain of a long channel MOSFET. Lithographic dimensions of the dots ranged from 40 nm to 200 nm. Measurements at low temperatures indicate that electrostatic confinement reduces the dot size to 15 nm. We observe evidence of quantum effects as we step the fermi energy by the top gate as well as magnetic field.
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