Abstract
We have reported the single-electron charging effects in Nb/Nb oxide-based single-electron transistors (SETs) at room temperature (T=298 K). The SETs were first fabricated by a scanning probe microscope based anodic oxidation. Then, the miniaturization of tunnel junctions was performed by thermal oxidation. Ultra-low-capacitance tunnel junctions were easily obtained by utilizing both kinds of oxidation processes, which realizes room-temperature Nb-based SETs.
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