Single dominant distribution of Ge nanogranule embedded in Al oxide thin film

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This paper investigates size distribution of Ge nanogranules embedded in Al oxide thin film prepared by rf reactive sputtering method. It is found from the results of x-ray diffraction and small angle x-ray diffraction spectroscopy that their mean sizes distribute bimodally or single dominantly with respect to sputtering process parameter of additional oxygen ratio in Ar and Ge concentrations. Compositional plane of these distribution types reveals that single dominant distribution appears along the line of stoichiometric composition of Al2O3, and deviation from stoichiometry results in bimodal distribution. Thus, size uniformity of Ge nanogranules seems to be enhanced when the Al oxide matrix forms stoichiometric composition.