Abstract

Single-crystalline n-type silicon nanowire (n-SiNW) arrays have been synthesized by electroless metal deposition on a silicon wafer chip in an ionic solution through selective etching. The photoelectrochemical properties of the SiNW arrays were studied (under white illumination conditions) in an aqueous electrolyte [with redox couple] and compared to those of its untreated bare polished Si sample counterpart (n-Si). The open-circuit photovoltage was lower, on average, for SiNWs array photoelectrodes, while short-circuit current density, fill factor, and overall energy conversion efficiency of the SiNWs array photoelectrodes were generally superior to those of the n-Si junction devices.

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