Single crystalline nitrogen-doped InP nanowires for low-voltage field-effect transistors and photodetectors on rigid silicon and flexible mica substrates

Abstract

Doped nanowires can exhibit improved performance compared with the un-doped ones especially in conductivity. N-doped InP nanowires are synthesized by chemical vapor deposition and fabricated into field effect transistors (FETs) and photodetectors on rigid silicon, flexible mica slice and polyethylene terephthalate (PET) film. Single N-doped InP nanowire FET on silicon wafer shows excellent electrical transport property and classical n-type semiconductor behavior with a high on-off ratio of 822 and a high carrier mobility of 43.6cm2v−1s−1, which is much higher than pure InP nanowire. Single N-doped InP nanowire photodetector on silicon wafer exhibits a fast response time and a high white light responsibility of 0.19×104AW−1 at the bias voltage of 1.0V. The devices are also fabricated on flexible transparent mica slice, a novel flexible substrate and PET film, which possess perfect ductility, folding endurance and preserve high performance. Furthermore, hybrid organic–inorganic poly (3-hexylthiophene) (P3HT): N-doped InP nanowire heterojunction photodetectors are also fabricated, showing much improved photocurrent compared with the pristine N-doped InP nanowire photodetectors based on different substrates. These N-doped InP nanowire devices exhibit the low power consumption, high performance and flexibility of nano-devices, which are promising for future applications requiring large-area, high speed and low-power consumption devices.