Abstract

Metal-halide perovskites have long carrier diffusion lengths, low trap densities and high carrier mobilities, and are therefore of value in the development of photovoltaics and light-emitting diodes. However, the presence of thermally activated carriers in the materials leads to high noise levels, which limits their photodetection capabilities. Here, we show that ultrasensitive photodetectors can be created from single-crystalline nanowire arrays of layered metal-halide perovskites. A series of nanowires was fabricated in which layer-by-layer self-organization of insulating organic cations and conductive inorganic frameworks, along the nanowire length, creates high resistance in the interior of the crystals and high conductivity at the edges of the crystals. Using these structures, high-performance photodetection was achieved with responsivities exceeding 1.5 × 104 A W−1 and detectivities exceeding 7 × 1015 jones. Our state-of-the-art device performance originates from a combination of efficient free-carrier edge conduction and resistive hopping barriers in the layered perovskites. Photodetectors made from single-crystalline nanowire arrays of layered metal-halide perovskites exhibit detectivities of more than 7 × 1015 jones, due to a nanowire structure that combines high resistance in the interior of the crystals and high conductivity at the edges of the crystals.

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