Abstract
In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hot-wall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600°C. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates.
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