Single-crystalline GaN porous template prepared by a simple top-down nitridation technique

Abstract

We have developed a simple top-down technique for preparing GaN porous templates with high single-crystallinity by high-temperature nitridation of β-Ga2O3 films. The GaN template converted from β-Ga2O3 film contains many voids and exhibits good-crystallinity with (0 0 2) orientation. The results confirm that the GaN porous template is stress-free, and the re-nitridation can effectively improve the crystal quality and luminescence properties of the GaN template. A ∼100 μm GaN thick film has been grown on the GaN porous template by halide vapor phase epitaxy, and self-separation of the GaN thick film from the sapphire substrate has been successfully achieved.