Abstract
The cascode structure was fabricated by combining the H-diamond normally-ON p-FET with the Si normally-OFF p-FET. The cascode shows normally- OFF characteristics with the threshold voltage of −0.8 V and the maximum transconductance of 344.6 mS/mm. The maximum saturation drain current and minimum ON-resistance are 34.2 mA/mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$18.74 ~\Omega \cdot $ </tex-math></inline-formula> mm, respectively. In addition, the cascode structure can work as an inverter. The voltage transfer characteristics (VTCs) and dynamic switching characteristics at the frequency of 200 Hz of the diamond cascode inverter were demonstrated first. These results indicate that the diamond cascode is suitable to be used to achieve diamond normally- OFF device and can also be used to work as the inverter.
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