Abstract
The effects of accumulated radiation damage which arise from the excessive current density employed during focused ion beam implantation are described. The dwell time during beam scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is described which enables the reduction of radiation damage induced by a focused ion beam to the level of conventional ion implantation. This is of importance for the formation of single-crystalline CoSi2 layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
