Abstract
A process to form thin films of lead zinc niobate–lead titanate (PZN–PT) from a bulk crystal for microelectronic and microelectromechanical device applications is presented. The structural phase transitions and ferroelectric ordering in unpoled crystalline bulk and thin-film relaxor PZN–PT are studied from −190 °C to 600 °C using polarized micro-Raman scattering. The structural phase transitions in this material are observed by distinct changes in the polarization selectivity. The results for the thin film and bulk crystal are in good agreement for a wide range of the temperatures studied, indicating that the thin-film PZN–PT retains much, if not all, of the structural and ferroelectric properties of the original bulk substrate.
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