Abstract
Tin monosulfide (SnS) is an interesting semiconductor for its promising use in multifunctional devices. Compared to the p-type doping via monovalent metal ions, the n-type doping of SnS is challenging because of the easy formation of intrinsic defect VSn″. In this work, we grew a sizable n-type SnS single crystal through the temperature-gradient technique by simply introducing the S vacancy. The Rietveld refinement of x-ray powder diffraction gave the lattice parameters of our sample, which agrees well with the literature. The composition ratio of Sn:S was examined to be 1:0.96 verifying the existence of S vacancies. The Hall measurement confirmed the n-type carriers in our crystal, reaching a carrier concentration of ~1.7 × 1018 cm−3. Furthermore, the thermoelectric measurements revealed large Seebeck coefficients and good electrical conductivities. In the temperature regime of 300 K–550 K, the acoustic scattering of electrons was found to dominate the overall in-plane electrical transport.
Published Version
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