Single-crystal growth of binary and ternary rare earth silicides

Abstract

Single crystals of the binary CeSi 2 and selected ternary RE 2TMSi 3 (RE=Ce, Tb, Dy; TM=Pd, Co, Ni) compounds were grown by vertical floating zone melting both with RF induction heating and optical heating. The compounds exhibit congruent melting behaviour at a composition different from the stoichiometric one. Accordingly, inferior element segregation along the crystal axis was detected. A silicothermic reaction during the growth process serves for melt refining with respect to the oxygen content and crystals practically free of oxide inclusions. The anisotropy of magnetic ordering and the magnetoresistance of selected single-crystalline ternary compounds is briefly described.