Abstract
We review recent progress in single crystal growth and study of electronic properties in . Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.
Highlights
Preparation of high-quality single crystal samples is one of the most essential components of experimental study in condensed matter science
We studied the long-standing problem in URu2Si2 using an extremely high-quality singlecrystal growth and high-pressure techniques
Hidden-order state causes an anomalous scattering on conduction electrons and, it is intimately related to the heavy fermion superconductivity in this compound
Summary
Preparation of high-quality single crystal samples is one of the most essential components of experimental study in condensed matter science. Sample impurities often lead to a significant modification to the intrinsic properties of materials. The conduction electrons are scattered by impurities raising the low-temperature residual resistivity. When an impurity carries magnetic moment, situation becomes more serious It changes the spin angular momentum of a conduction electron through the Kondo effect, leading to an increase of resistivity with decreasing temperature and compensation of the magnetic moment. It has been pointed out that there is a significant sample dependence on the physical properties, such as superconducting transition temperature and weak antiferromagnetic ordered moment observed in neutron scattering in the hidden order state. A clear antiferromagnetism is observed above a relatively small hydrostatic or uniaxial critical These are the characteristics of highly correlated electron systems. We review the present status of the crystal growth of URu2Si2 and the progress of physical property investigation using the high-quality single crystals
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