Abstract
Original approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35° was obtained on a nanocrystalline-diamond substrate.
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