Abstract

ABSTRACTSingle crystals of A1N to 1 mm thickness were grown in the range 1950-2250°C on 10×10 mm2 α(6H)-SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AlN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH3) flow. Optical microscopy, Raman and photoluminescence results are shown.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call