Abstract
Chemical vapor deposition has been been used successfully for the attainment of a single-crystal growth of gallium arsenide directly on a number of single-crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α-Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2).
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
