Abstract
MOS capacitors containing singe and dual nanocrystalline ITO and ZnO embedded in the Zr-doped HfO2 high-k gate dielectric were fabricated and characterized for nonvolatile memory functions. The nc-ITO and nc-ZnO embedded devices show mainly hole and electron trapping characteristics, respectively. The dual-layer nc-ITO and nc-ZnO embedded capacitors have more than double charge trapping capacities and faster charge rates than the single-layer embedded capacitors.
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