Abstract
Ceramic-based transparent dielectric materials are regarded as the best candidates for advanced energy storage and conversion materials because of their outstanding optical and electric properties. Nevertheless, due to the presence of low density, low band gap energy and large grain size, it is difficult to simultaneously obtain high energy storage density and high optical transmittance in lead-free based ceramics, which limiting their further development of practical applications. In this work, the relaxor ferroelectric ceramics of x mol% Er3+-doped 0.91 K0.5Na0.5NbO3-0.09BamSrnTiO3 (xEr-SrmBan) were constructed via A-site non-stoichiometric defect engineering. It is worth noting that excessive addition of Sr and Ba, especially Sr, can significantly refine the grain size and domain size on account of vacancy-related defect pinning. Finally, high energy storage density (W = 6.39 J/cm3, Wrec = 3.42 J/cm3) together with high optical transmittance (∼72% at 900 nm) can be achieved simultaneously in 0.25Er-Sr1Ba0.5 due to the exist of dense structure, ultrafine grain size (<100 nm), small-sized nano-microdomains (i.e., PNRs, < 50 nm) and large bandgap energy (∼3.10 eV). Furthermore, a fast discharge time of 42 ns can also be realized. The above results indicate that the present study helps to promote the development of advanced transparent energy storage and conversion materials.
Published Version
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