Abstract
ABSTRACTTernary semiconductor Cd1-xZnxTe is a solid-state material for high energy radiation detection. This has wide and tunable bandgap (1.45–2.25 eV). It has high resistivity and low noise generation. This can be used for room temperature radiation detection. It has improved charge collection efficiency and very good radiation absorption power for high energy radiations. High energy imaging for diagnostic and surveillance science demands for large area detectors. Large area imaging can only be addressed in thin film form. Thin films of ternary semiconductor can be deposited by various methods like PVD, CVD, MOCVD, Liquid Phase Epitaxy (LPE), Closed Space Sublimation (CSS), Magnetron Sputtering, etc. In this paper, fabrication of thin film of Cd1-xZnxTe by simultaneous vacuum evaporation and fusion of CdTe and ZnTe powders from the same vacuum evaporation unit is presented. Fabricated film is then subjected to structural and optical characterisation studies. CZT thin films have immense applications in imaging areas and such thin films using PVD coating is fabricated in this work with simultaneous fusion of two constituent compounds.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
