Abstract

An individual bismuth wire (1.90 μm in diameter and 1554 μm in length) embedded in a quartz template was used to demonstrate simultaneous transport coefficient measurements for resistivity, magneto-resistivity, Hall coefficient, and Seebeck coefficient at 300 K. To obtain these measurements, we performed nano-fabrication using a dual-beam focused ion beam apparatus and fabricated local electrodes at the six-side and two-edge positions of the wire. Furthermore, using the measured values, we estimated carrier density, mobility, and Fermi energy. The obtained physical properties were similar to those of bulk bismuth, as expected, because of its large diameter.

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