Abstract
Abstract Complementary resistive switching (CRS) is a suitable method to solve the sneak path problem in passive crossbar arrays. In this work, we fabricated very simple single layered memory devices consisting of indium tin oxide (ITO)/polymer/ITO structures using a conductive polymer, polyaniline (PAni), showing forming-free CRS behavior. The switching mechanism is discussed by the simultaneous protonation/deprotonation process that is a new expression of CRS behavior in memory devices. This mechanism originates from changes in the resistance states between the two different forms of PAni and is influenced only by applying the electric field. For this purpose, PAni nanostructures with different concentrations of hydrochloric acid (HCl) were synthesized, which the structural and morphological characteristics of the specimens confirmed their formation. The electrical conductivity parameter was also discussed, and according to the data obtained from the analyses, increasing the acid concentration reduces the conductivity of PAni nanostructures as a resistive device.
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