Abstract
Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3-x</sub> /ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3-x</sub> stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
