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Abstract
Using two resistive films on a single substrate has a significant advantage in fabricating thin film hybrid circuits. If the two films have the same sheet resistance, a temperature coefficient of resistance (TCR) of zero can be obtained. The preparation of two films with a sheet resistance ratio of 1:10 gives the possibility of a large increase in the range of values for the resistors prepared. A technological process for preparing Cr-SiO ( R s = 2.0 kΩ/□ ) and NiCr ( R s = 200 Ω/□ ) films is discussed in this paper. Multisource evaporation (evaporation from two sources) is used. The component and R s control are achieved using rate, thickness and R s sensors. First Cr-SiO is deposited and then NiCr. The final metalization is nickel and gold as separate layers. The fabrication of test structure is performed by plasma and conventional wet etching processes. The prepared test structure and the thermal stabilization show that deviation in the TCR for the two films must occur in the same direction from negative topositive for a minimum value to be reached simultaneously. Resistors with two nominal values and a TCR for both films of less than 50 ppm can be made using the technology described.
Published Version
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