Simultaneous magnetoresistance and magneto-optical measurements of domain wall properties in nanodevices

Abstract

Simultaneous anisotropic magnetoresistance and magneto-optical Kerr effect measurements have been performed on L-shaped Permalloy nanowires. It is shown that through magnetoresistance measurements at the corner of the device, the switching information of both arms in a single loop can be accessed. This is a very efficient method that allows for the characterization of the pinning properties in such a device as well as the understanding of the fundamental physics behind the nucleation and propagation processes in such a system. Experimental results are in good agreement with micromagnetic simulations.