Abstract
Abstract Diffuse reflectance spectroscopy (DRS) is used for in situ measurements of temperature transient and temperature drift during MBE growth of AlAs GaAs and InGaAs GaAs layered structures. The experimental results are compared together with pyrometric interferometry (PI) measurement taken concurrently. Our results show that DRS is a viable method for in situ real-time monitoring of both substrate temperature and layer thickness.
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