Abstract
Thin epitaxial W(1 1 0)/Co and Au(1 1 1)/Co films were prepared by molecular beam epitaxy on single crystal sapphire Al 2O 3(1 1 2 ̄ 0) substrates and investigated by means of low energy electron diffraction and Auger electron spectroscopy. The growth of W on Al 2O 3(1 1 2 ̄ 0) was found to depend strongly on substrate temperature and film thickness. W films deposited at a substrate temperature T p=1200 K with a film thickness d W⩾100 Å revealed a bcc(1 1 0) structure with a mean terrace size of 40 Å. Epitaxial growth of Au was achieved at T p=300 K with a layer thickness d Au=30 Å for a deposition onto the W(1 1 0) substrate layers. The structural properties of thin Co films grown at T p=300 K on the W(1 1 0) and Au(1 1 1) substrate layers were studied as a function of Co film thickness for wedge-shaped layers. The Co films were found to grow epitaxially in both cases with distinct growth modes and lattice strains.
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