Abstract
(1-x)Ga0.8Fe1.2O3 – xGd3Ga5O12 composites have been studied for different concentrations (0.0 ≤ x ≤ 0.2) at two different annealing temperatures (1300 °C and 1350 °C). Increasing concentration of Gd3Ga5O12 (GGG) is observed to reduce grain size from 2.8 μm for x = 0.0 to 903 nm for x = 0.2, annealed at 1300 °C. Annealing at 1350 °C keeping the concentration same at x = 0.2, further reduces the grain size to ∼ 669 nm. Consistent with the grain size reduction, a reduction of leakage current by five orders of magnitude has been achieved. Using high resistive GGG enhanced the dielectric constant of all the composites along with a significant reduction in conductivity. An enhancement of the magnetodielectric factor observed in all the composites indicates improved coupling between magnetic and electrical parameters.
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